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Study on the gate loop design and its impact on switching characteristics of GaN Transistors
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| Author(s) |
Xiaomeng GENG |
| Abstract |
This paper studies design parameters for the gate loop of GaN-based transistors. To achieve stable and fast switching of the GaN transistors aiming at MHz-range operation, different layout factors and their influence on gate loop inductances are investigated in simulations and measurements. Experimental results demonstrating the impact of driver ICs and their packages on the switching characteristics are presented as well. |
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| Filename: | 0371-epe2022-full-14320794.pdf |
| Filesize: | 1.43 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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