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Shaping the transition from Si-based power devices to SiC MOSFETs and GaN HEMTs
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| Author(s) |
Gerald DEBOY |
| Abstract |
With an expected growth of SiC-device and module volumes to around 6 bn US$ and GaN HEMTs to2 bn US$ in the next 5 years the transition from Si-based power devices to their corresponding Widebandgap technologies is now fully on its way. The advantages being created by wide bandgap devices on system level will outweigh their higher costs on device level. These benefits are as diverse as the applications where wide bandgap power devices will be considered in the first place. SiC MOSFETs have started in the field of Photovoltaics by improving efficiency and size/weight of the PV inverter and are now penetrating the main inverter offering a range extension of up to 8\%. GaN HEMTs first made an impact on chargers for mobile phones and laptops by enabling form factors up to now unachievable. The presentation will start with an overview of key performance indicators of wide bandgap technologies in comparison to their silicon counterparts and their perspective along further generations. In a 2nd section we will discuss topologies and modulation schemes being required to reach the full system benefits of wide bandgap power devices. An outlook on future trends and applications will close the talk. |
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| Filename: | 0570-epe2022-full-20280495.pdf |
| Filesize: | 151 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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