| Abstract |
Focusing on the change in power semiconductor chip characteristics in response to mechanical stressapplied to the chip, we confirmed the change of IGBT (Insulated Gate Bipolar Transistor) characteristics by bending test using a PCB (Printed Circuit Board) substrate to which an IGBT chip was mounted. The critical stress under which IGBT chip would fail was calculated by mechanical stress simulation, and the corresponding bending deformation was then applied to the PCB board and the characteristics of the IGBT chip has been investigated. Specifically gate capacitance has decreased after critical tensile stress loaded. By considering the stress direction of the each bending test and the structure of the IGBT chip, some hypothesis that can explain the mechanism of the characteristics change was suggested. As the next step, this hypothesis will be tested and the research regarding this chip characteristics change will be continued. |
