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PCB Technology Comparison Enabling a 900V SiC MOSFET Half Bridge Design For Automotive Traction Inverters
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| Author(s) |
Matthias SPIELER |
| Abstract |
The design of automotive traction inverters for an 800 V dc-bus typically utilize 1.2 kV silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFET). The 1.2 kV power devices allow for high overshoot voltages during switching transients but experience a high on-state resistance due to the die's thick drift layer region. This paper proposes the usage of 900 V SiC MOSFETs for 800 V automotive traction inverter applications. The proposed half-bridge design combines discrete power semiconductors and the dc-link capacitor on one printed circuit board (PCB). This design approach enables a small current commutation loop and thus a small overshoot voltage. Three different PCB technologies are compared based on their suitability for the traction inverter application. An 800 V half-bridge prototype is designed, simulated, and tested. Measurement results are provided and show an overshoot voltage of 49.6 V at a switching speed of 69 V/ns under maximum load conditions. |
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| Filename: | 0239-epe2022-full-17124164.pdf |
| Filesize: | 3.07 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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