| Abstract |
This paper presents a method for junction temperature monitoring of SiC-MOSFETs based on a high-frequency gate-signal injection. The signal is injected during steady state (e.g. off-state) resulting in a current response, which depends on the temperature dependent gate impedance. The external gate resistor is used as a current shunt to capture the current response. The resulting signal contains the junction temperature information due to the temperature dependency of the gate impedance. This paper focuses on a sinusoidal approach to overcome the challenges due to the temperature dependent parasitic capacitance of the gate circuit. Measurements show the proof of concept, however, there are still challenges to face. |
