| Abstract |
This article presents a novel method for dynamic measurements of COSS-V characteristics of SiC power modules based on the process of charging the output capacitance of the transistors. The technique has been validated for a 1.2kV/450A power module with this characteristic available in its datasheet, showing good compliance. Then, this technique has been used to determine the COSS-V characteristics of a 1.7kV/900A SiC MOSFET module, which allowed the extraction of the capacitive current while switching off the transistor. Finally, the channel current and the share of the capacitive current in the drain current were determined for various switched currents and switching speeds. According to the capacitive charge calculations for several cases, the accuracy of the method is high enough to perform switching loss estimations. |
