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Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region
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| Author(s) |
Xuyang LU |
| Abstract |
A new method is proposed in this paper to investigate the influence of current collapse effect on theId-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. Themeasured Id-Vds characteristics with and without the Vds bias are compared, which shows the effect ofcharge trapping due to the Vds bias on device Id-Vds characteristics in saturation region. These data willbe used for a device model including the current collapse effect in full Id-Vds region. |
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| Filename: | 0544-epe2022-full-18150620.pdf |
| Filesize: | 991.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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