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Impact of Bond Wire Configuration on the Power Cycling Capability of Discrete SiC-MOSFET Devices
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| Author(s) |
Patrick HEIMLER |
| Abstract |
This work investigates the power cycling capability of SiC MOSFETs (60 mO/1200 V) in TO-247-packages with two different bonding configurations. As a result, a difference in lifetime by a factor of1.5 to 2 is determined. The failure mode was an increase in forward voltage drop by degradation of thebond wire connection. The ANSYS simulations (thermal-electrical and mechanical) confirm thatseveral thinner bond wires have a higher power cycling capability compared to a few bond wires withlarger diameters. |
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| Filename: | 0241-epe2022-full-16080443.pdf |
| Filesize: | 855.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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