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Gate Input Capacitance Characterization for Power MOSFETs Using Turn-on and Turn-off Switching Waveforms
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| Author(s) |
Yota NISHITANI |
| Abstract |
We propose a novel method for characterizing the input capacitance of power metal-oxide semiconductor field-effect transistors (MOSFETs). In contrast with the conventional method, our switching-based characterization extracts gate-source and gate-drain capacitances in a single setup, without partial differentiation. Characterization using both turn-on and turn-off switching waveforms improved the simulation accuracy and reduced the switching timing error by a factor of more than 2.5x. |
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| Filename: | 0483-epe2022-full-10434210.pdf |
| Filesize: | 697.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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