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GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage
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| Author(s) |
Tobias BRINKER |
| Abstract |
This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and silicon carbide (SiC) diodes. For this inverter topology, the opportunity to use negative gate turn-off voltage without affecting the reverse conduction losses is identified as a significant advantage. The impact of this effect on the switching losses is investigated. Double pulse tests with a hardware prototype were performed, showing a reduction of switching losses for high turn-off currents when negative gate turn-off voltages were applied. |
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| Filename: | 0425-epe2022-full-16213590.pdf |
| Filesize: | 1.09 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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