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Evaluation of Drain-Source Voltage in Switch Transient Time Intervals as Gate Oxide Degradation Precursor of SiC Power MOSFETs
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| Author(s) |
Javad NAGHIBI |
| Abstract |
Gate oxide degradation is a major chip-related reliability issue in Silicon Carbide power MOSFETs. Being focused on turn-on/-off transient behavior of the switch, drain-source voltage waveform is employed as a gate oxide degradation precursor in this paper. Precursor evaluation is carried out in various operating conditions of the switch. |
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| Filename: | 0475-epe2022-full-09460434.pdf |
| Filesize: | 2.153 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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