| Abstract |
Based on wide bandgap devices (WBG) characterization constraints, this work presents the design, implementation and characterization of an integrated current sensor in a GaN HEMT (Gallium Nitride High-Electron-Mobility Transistor) by using the current-mirroring technique. Two HEMTs are implemented in this design; the compromised between the size ratio of these two transistors in the current-mirroring circuit and the sensitivity of the sensor are taken into account on the device design phase. In the implementation phase, the auxiliary components are optimized for the operation of the sensor, and then the circuit with the integrated current sensing in GaN power device is characterized with a high temperature double pulse test method, up to 175°C. |
