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Design Method of a High Frequency GaN-based Half-Bridge with Bottom-Side Cooled Transistors Using Multi-PCB Assembly
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| Author(s) |
Loris PACE |
| Abstract |
This paper proposes a Multi-PCB (M-PCB) design of a half-bridge using bottom-side cooled GaN transistors with optimal layout and thermal management. The fabrication process only requires limited technological capabilities and is well-suited for industrial applications. Electrical and thermal performances are evaluated by measurements and simulation and compared with previous works. |
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| Filename: | 0512-epe2022-full-10030453.pdf |
| Filesize: | 988.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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