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Desaturated turn-off of low-saturation IGBTs with clamping method to reduce turn-off energy losses
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Author(s) |
Vishwas ACHARYA NAYAMPALLI |
Abstract |
Investigations into the desaturated turn-off of low-saturation IGBTs with a novel hardware-based clamping approach are presented in this paper. Effects of the clamping voltage level and duration of desaturation on the reduction in turn-off energy losses are investigated. Turn-off measurement results with experimental low-saturation IGBT chips with the implemented clamping method demonstrate significant reduction in turn-off losses relative to the intrinsic turn-off of the device. Furthermore, TCAD based turn-off simulations with the clamping approach applied to different IGBT device models are presented with the objective of determining the potential of this method in reducing turn-off losses, as well as to obtain an insight into the necessary device on-state carrier concentration profile to obtain large reductions in turn-off energy losses for the advantageous application of this turn-off method. |
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Filename: | 0240-epe2022-full-12215022.pdf |
Filesize: | 1.022 MB |
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Type |
Members Only |
Date |
Last modified 2023-09-24 by System |
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