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   Desaturated turn-off of low-saturation IGBTs with clamping method to reduce turn-off energy losses   [View] 
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 Author(s)   Vishwas ACHARYA NAYAMPALLI 
 Abstract   Investigations into the desaturated turn-off of low-saturation IGBTs with a novel hardware-based clamping approach are presented in this paper. Effects of the clamping voltage level and duration of desaturation on the reduction in turn-off energy losses are investigated. Turn-off measurement results with experimental low-saturation IGBT chips with the implemented clamping method demonstrate significant reduction in turn-off losses relative to the intrinsic turn-off of the device. Furthermore, TCAD based turn-off simulations with the clamping approach applied to different IGBT device models are presented with the objective of determining the potential of this method in reducing turn-off losses, as well as to obtain an insight into the necessary device on-state carrier concentration profile to obtain large reductions in turn-off energy losses for the advantageous application of this turn-off method. 
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Filename:0240-epe2022-full-12215022.pdf
Filesize:1.022 MB
 Type   Members Only 
 Date   Last modified 2023-09-24 by System