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Condition Monitoring Approach of a SiC Power Semiconductor using Turn-Off Delay with an Integration in a SiC Driver
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| Author(s) |
Victor GOLEV |
| Abstract |
This paper deals with a condition monitoring approach based on the turn-off delay measurement and its integration in a SiC driver to measure the temperature-sensitive parameters in a continuous switching operation of a SiC power semiconductor. The presented approach requires a small area for integration and can be implemented with little effort. |
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| Filename: | 0184-epe2022-full-22041118.pdf |
| Filesize: | 1.313 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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