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Comparison of Power Cycling Results of discrete GaN Cascodes for Automotive Power Electronics with high Temperature Swings
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| Author(s) |
Florian LIPPOLD |
| Abstract |
High voltage rated GaN HEMTs are attractive for automotive applications such as on-board charger orauxiliary power supplies. Nowadays GaN is packaged as single chips in discrete housings. In this papera power cycling set up and results for GaN components in discrete TO-247 package are presented. |
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| Filename: | 0210-epe2022-full-13084308.pdf |
| Filesize: | 893.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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