| Abstract |
A GaN-on-AlN/SiC technology is proposed for monolithic GaN power switch integration. As opposed to conventional GaN-on-Si devices, the insulating SiC substrate results in immunity to back-gating effects and enables monolithic integration without degradation of switching characteristics resulting from the shared substrate. This is validated for a discrete half-bridge, with the substrate of both transistors shorted together, as well as for a monolithic half-bridge. Hard switching transients up to 300 V in a double-pulse test with both half-bridges reveal faster switching transients and reduced switching losses for the monolithically integrated half-bridge. |
