| Abstract |
Gallium Nitride (GaN) is a next-generation `wide-bandgap' semiconductor, replacing legacy siliconchips in power electronic systems. To maximize the full potential of GaN's superior performancetraits, Navitas monolithically integrates power, drive, and control to enable up to 3 times fastercharging and 3 times more power in half the size and weight for mobile fast chargers, consumerelectronics, solar, data centers and electric vehicles. Integration is key with GaN power devices due to their extremely high switching speeds and sensitive gate characteristics. The next generation of GaN power ICs enable even higher efficiency, autonomy, and reliability with precision sensing of system current, voltage and temperature with real-time control and protection. Implementing integrated loss-less current sensing, external monitoring components such as large, lossy sense resistors are eliminated, reducing system power loss, complexity and system cost. Offering GaN's superior performance and switching speed alongside the highest level of protection and sensing, GaN power ICs can be confidently used in higher power applications with stringent regulations for efficiency and reliability, such as solar inverters, motor drives, server power, EV Onboard Chargers (OBC) and DC-DC systems. |
