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Active substrate termination of discrete and monolithic bidirectional GaN HEMTs in a T-type inverter
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| Author(s) |
Carsten KURING |
| Abstract |
Monolithically integrated lateral Gallium-nitride bidirectional transistors can achieve symmetric conduction and blocking capability at a reduced on-state resistance compared to their discrete counterparts. An actively switched substrate effectively prevents back-gating effects in normal-ly-off GaN-on-Si bidirectional transistors and enables symmetrical loss-minimized switching and on-state characteristics. |
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| Filename: | 0377-epe2022-full-10324726.pdf |
| Filesize: | 3.1 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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