| Abstract |
In this paper, the performance of an intelligent-gate-driver-based self-regulating gate control approach, which can reduce switching losses and EMI at SiC MOSFET turn-off and turn-on, is investigated by simulation and verified by measurements. Firstly, a MOSFET behavior model is presented and confirmed with double pulse measurement results of this approach. Based on this model, the performance of this approach in continuous operation is evaluated and compared with measurement in continuous operation. It is verified that there is a good match between measurement and simulation. The trade-off between switching losses and EMI is improved sig-nificantly by the proposed gate control approach compared to simple gate control with a single gate resistance. |
