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Thyristor with an Integrated Element Optimized for Protection against Overvoltage Impulses with Low Rate of Rise
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Author(s) |
Dmitry TITUSHKIN |
Abstract |
This article discusses safe switching of a protective element integrated into a power thyristor in the formof a four-layer dynistor structure with a reduced avalanche breakdown voltage for protection againstovervoltage impulses with low rate of rise. This paper proposes criteria allowing to optimize the topologyof the cathodic shunting of the protective element to ensure its safe switching, and presents the resultsof experiments confirming the safe switching of the protective elements with an optimized topology. |
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Filename: | 0027-epe2021-full-10511532.pdf |
Filesize: | 411.8 KB |
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Type |
Members Only |
Date |
Last modified 2022-03-15 by System |
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