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   Thyristor with an Integrated Element Optimized for Protection against Overvoltage Impulses with Low Rate of Rise   [View] 
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 Author(s)   Dmitry TITUSHKIN 
 Abstract   This article discusses safe switching of a protective element integrated into a power thyristor in the formof a four-layer dynistor structure with a reduced avalanche breakdown voltage for protection againstovervoltage impulses with low rate of rise. This paper proposes criteria allowing to optimize the topologyof the cathodic shunting of the protective element to ensure its safe switching, and presents the resultsof experiments confirming the safe switching of the protective elements with an optimized topology. 
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Filename:0027-epe2021-full-10511532.pdf
Filesize:411.8 KB
 Type   Members Only 
 Date   Last modified 2022-03-15 by System