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Nanoscale observation of the power semiconductor devices by scanning capacitance force microscopy and its device simulation
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| Author(s) |
Nobuo SATOH |
| Abstract |
We have observed in the nanoscale of the power semiconductor device under the bias voltage applied using by the scanning probe microscope based on combined with AFM/KFM/SCFM that achieved high spatial-resolution and high sensitivity. Based on the observed results, numerically analyse as device simulation were also presented. |
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| Filename: | 0295-epe2021-full-15101956.pdf |
| Filesize: | 2.123 MB |
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| Type |
Members Only |
| Date |
Last modified 2022-03-15 by System |
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