| Abstract |
In the design of high-power density converters, increasing the switching frequency is one of the mainfactors to enable the reduction in the required value and size of the passive components. The switchingfrequency can reach a few MHz in the case of Gallium Nitride devices. At such a high frequency a slightvariation in the capacitances and inductances in the converter circuit, can have a considerable effect onits switching behaviour. Therefore, a 3D design of stray elements, such as equivalent series inductanceof capacitors and equivalent parallel capacitance of inductors is required to control these effects andimprove the converter performance. Also, having both active and passive components integrated withthe whole converter will allow us to better control the effects of the parasitic elements and achieve amore optimal switching behaviour.In this paper, a Modified Equivalent Circuit (MEC) from the Classic Equivalent Circuit (CEC) has beenproposed and is based on physical properties of single-layer solenoid inductor along with a suggestedpath of the energy transfer between the two adjacent turns of the inductor. Both inductance andcapacitance matrices are obtained using magneto-static and electro-static finite element simulations(using MAXWELL). The results of these FEM simulations coupled with the proposed equivalentelectric circuit is used to predict the frequency behaviour of the component. The model is validatedexperimentally using an experimental inductor demonstrator. |
