| Abstract |
This paper introduces an intelligent gate driver-based self-regulating gate control solution that can realize low switching losses and low EMI at SiC MOSFET turn-on for varying operating conditions across the full operating range. The gate control strategies of this solution are investigated in different phases of the SiC MOSFET turn-on process. At first, it is confirmed by measurements that low switching losses and low EMI can be realized at a certain operating point with its corresponding optimum setting of the gate control unit using different gate resistors. However, it is found that this kind of optimum setting is sensitive to variation of operating conditions. A simulation is performed to verify that varying optimum settings caused by varying operating conditions can be traced by the proposed self-regulating gate control. Finally, a performance evaluation of this solution in continuous operation is performed. The turn-on switching performance of SiC MOSFET can be significantly improved. Besides low switching losses and low EMI, this solution provides other advantages like a simple gate control logic, low-cost and low calibration, hardware and measuring efforts compared to other intelligent gate driver-based solutions. |
