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   Investigation of Gate Current Shaping for SiC-based Power Modules on Electrical Drive System Power Losses   [View] 
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 Author(s)   Mohamad SAYED 
 Abstract   An adjustable current source driver based on shaping the gate current of a SiC MOSFET is presented in this paper. A sequential optimization algorithm to reduce the turn-on and turn-off switching losses while maintaining equal device stress is developed. The proposed driver uses the maximum operating conditions in the entire operating range, in contrast to commercial drivers which are usually designed for a worst-case operating point. Thus, an improvement on full load as well as on partial load conditions is attained in comparison to the conventional voltage source driver. At system level, the reduction of switching losses lead to an improvement of the inverter efficiency and to a reduction of the electrical drive WLTP cycle losses by 7\%. 
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Filename:0002-epe2021-full-08352319.pdf
Filesize:772 KB
 Type   Members Only 
 Date   Last modified 2022-03-15 by System