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Extension on ASM HEMT Model with Trapping Effects in GaN Power Devices
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| Author(s) |
Mathias WEISER |
| Abstract |
We present a model to simulate the dynamic drain source resistance of GaN-based HEMTs in circuit simulators. Instead of discrete RC-subcircuits for trap charging and discharging processes, the proposed model uses a distributed RC network to approximate a Gaussian distribution of capture and release time constants to decrease the parameter count and increase accuracy. We have implemented the model into the ASM-HEMT standard compact model and applied it to a commercial 100 V GaN-on-Si HEMT. The model considers the drain source resistance evolution over many magnitudes in time. It can be used to predict additional trapping-induced losses in switched-mode power supplies. |
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| Filename: | 0358-epe2021-full-00315874.pdf |
| Filesize: | 452.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2022-03-15 by System |
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