| Abstract |
This paper investigates the efficiency, performance, and design complexity of medium-voltage and high-power modularized dual active bridge (MDAB) converters employing high-voltage SiC MOSFETs and operating at high switching frequencies. The modelling of switching transients in terms of various timeintervals for SiC MOSFET power modules rated at 3.3 kV and 750 A are presented and compared withexperimental switching data. Based on these evaluations, the minimum deadtime intervals and maximumtheoretical switching frequency of 3.3 kV SiC MOSFETs employed in MDAB converters are estimated. |
