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Comparison of Reverse Conducting IGBT Concepts regarding Reverse-Recovery Behavior and Gate Drive Requirements
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| Author(s) |
Daniel LEXOW |
| Abstract |
Reverse Conducting IGBT use n-shorts at the backside emitter to allow conduction of the body diode of the MOS structure. The p-well of the MOS cell acts as an anode of the diode. The anode efficiency strongly depends on the gate-emitter voltage. There are different concepts on how to deal with this behavior. This paper describes the influence on the static and dynamic diode behavior and the conse-quences for the gate drive. |
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| Filename: | 0179-epe2021-full-14021021.pdf |
| Filesize: | 314.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2022-03-15 by System |
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