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Benefits of implementing a duty-ratio controlled parallel-resonant converter with SiC MOSFETs instead of Si IGBTs.
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| Author(s) |
Evangelos LIAKOS |
| Abstract |
In this paper, the operation of a parallel resonant converter that exploits the parasitic components of itstransformer is described briefly. Measurements from a high power DC pulsed generator with Si IGBTsare obtained. Finally, the experimentally calculated losses of the Si IGBTs are compared with SiCMOSFETs' losses using simulations of the system. |
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| Filename: | 0346-epe2021-full-09534805.pdf |
| Filesize: | 907 KB |
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| Type |
Members Only |
| Date |
Last modified 2022-03-15 by System |
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