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Analysis of dv/dt Discrepancy between High Power SiC-MOSFET Inverter Output and its Semiconductors
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| Author(s) |
Felix KAYSER |
| Abstract |
High dv/dt of fast switching power semiconductors lead to high stress for the motor insulation. Thispaper presents the significant differences between the dv/dt at the power semiconductor and the inverterterminals and how this is influenced by inductive coupling of inverter phases. |
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| Filename: | 0095-epe2021-full-11544844.pdf |
| Filesize: | 1.833 MB |
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| Type |
Members Only |
| Date |
Last modified 2022-03-15 by System |
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