| Filename: | 0303-epe2021-full-14092642.pdf |
| Filesize: | 979.7 KB |
| 3.3kV-Silicon-Silicon Carbide-Topology-Hybrid-Switch for High Power Resonant ZVS Inverters - Optimisation of the Power Losses | ||||||
| Author(s) | Michael MEISSNER | |||||
| Abstract | In order to investigate the capabilities of a hybrid switch setup consisting of two different semiconductormaterials, namely silicon (Si) and silicon carbide (SiC), two different technologies (MOSFET and IGBT) and further a combination of two topologies (NPC and half bridge) within a resonant converter a series of measurements have been conducted. In this context, especially the impact of resonant frequency as well as delay and dead time intervals will be presented by this contribution. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2022-03-15 by System | |||||
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