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A NOVEL PWM INVERTER USING TRANSFORMER-ISOLATED POWER MOSFETS
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| Author(s) |
M. A. Preston; J. D. Edwards; G. Williams |
| Abstract |
Transformer isolation of semiconductor switching devices is desirable, but difficult to implement with PWM control. These difficulties can be overcome with MOSFETs as a result of their gate characteristics of capacitance in parallel with a high resistance, by storing 'on' and 'off' states on the gate capacitance. Current techniques for accomplishing this are limited. An improved technique and an associated design method are presented along with experimental results. The design method is used to show that it is possible to design a general-purpose drive which will work with a wide variety of MOSFETs if a suitable series gate resistance is chosen. |
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| Filename: | Unnamed file |
| Filesize: | 3.832 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-03-03 by System |
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