Abstract |
The paper deals with the comparison of two different power electronic switches with respect to different parameters. In comparison to power MOSFETs conductivity enhanced FETs show a significant reduction in conduction loss and this especially in high voltage applications. However switching loss is increased because of slow turn off behaviour. There is no integral diode within the conductivity enhanced FET. Whether this is a bonus or a malus depends very much on the application. Using the integral diode of a power MOSFET as a free-wheeling path may cause large electrical stress for the switches involved. It is shown that conductivity enhanced FETs combined with external fast recovery diodes can have lower overall switching loss than power MOSFET with speed optimized integral diodes. With an experimental investigation such parameters as switching energies, switching times, peak power, peak current, conduction loss and loss vs. switching frequency were looked at and typical characteristics are presented. |