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   The Switching Behaviour of a New Very Fast Bipolar Power Transistor   [View] 
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 Author(s)   L. Lorenz; K. Reinmuth; G. Schulze 
 Abstract   This paper deals with a detailed analysis of the dynamic and static behaviour of a half bridge SIRET module. Due to the fine emitter structure, the short emitter lengths and the optimum arrangement of base contacts with small base widths, the SIRET is characterized by short switching and storage times and extended SOA region. Hence, high clock frequencies can be achieved with this module without any extra transistor circuitry. The turn-on methods and the conditions for a safe turn-off, free of interference are discussed, together with the short circuit capability. 
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Filename:Unnamed file
Filesize:3.149 MB
 Type   Members Only 
 Date   Last modified 2021-03-02 by System