| |
ACCOMODATING PARASITIC EFFECTS IN HIGH-FREQUENCY POWER-STAGES
| [View]
[Download]
|
| Author(s) |
F. V. P. Robinson; B. W. Williams |
| Abstract |
RC-snubber optimization still contains a large degree of empiricism because assumptions about device current-fail and snubber-component parasitic effects are imprecise. This becomes evident when applying small RC-snubbers to medium frequency (10-100kHz) MOSFET and IGBT power-stages, where snubber capacitance may approach device output-capacitance and where low-cost snubber-resistor parasitic inductance often exceeds the inductance being clamped. Methods of overcoming these and other difficulties, associated with very fast transient suppression, are presented, together with a re-assessment of existing RC-snubber optimization methods. |
| Download |
| Filename: | Unnamed file |
| Filesize: | 1.018 MB |
|
| Type |
Members Only |
| Date |
Last modified 2021-02-15 by System |
| |
 |