| Abstract |
The I.G.B.T. (insulated gate bipolar transistor), a very attractive device, seems to be the switch of the future, in medium power range. But since it is a new component, its behaviour is misjudged in particular switching modes. Once recalled principal characteristics of I.G.B.T., this paper deals with different switching modes (thyristor, dual-thyristor) to which are associated new types of high-frequency converters. These modes seems to release the best use of the device, as its appears in experimental results. Yet, this work points out latch-up and stored charge problems, in thyristor configuration and then, the necessity to define precisely the I.G.B.T. limitations in this mode, in order to allow conception of high-performing and low-cost converters. |
