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THE RING-EMITTER TRANSISTOR - A 20 KHZ HIGH-CURRENT SWITCH FOR PWM INVERTER APPLICATIONS
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| Author(s) |
Samir F. Salama; Joachim Holtz |
| Abstract |
The introduction of advanced microstructure technology in the fabrication of power semiconductor devices has created a new class of semiconductor switches with improved dynamic performance. The ring-emitter transistor SIRET is a product of the recent development in this area. This paper presents a study of the static characteristics and the dynamic switching performance of a half-bridge inverter built from a 50 A, 1000 V SIRET-Module. Owing to the special mechanical construction with minimized stray inductances, snubberless operation is possible at 20 kHz switching frequency. Special attention had to be given to thebase drive circuit as the switching performance of the device depends greatly on the base current waveform. |
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| Filename: | Unnamed file |
| Filesize: | 2.405 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-02-15 by System |
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