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INFLUENCE OF PARASITIC EFFECTS ON THE SWITCHING AND COMMUTATION BEHAVlOR OF FAST POWER SEMICONDUCTOR DEVICES
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| Author(s) |
G. Schulze; H. Stut; L. lorenz |
| Abstract |
The aim of this paper is to show how the individual dissipative components of a transistor half-bridge configuration can be measured and the efficiency of the various types of transistor evaluated. The way in which a power transistor can be optimized for high clock frequencies in conjunction with a free-wheeling diode is also elaborated. In addition to the consideration of the power losses of a power semiconductor device, the controllability of short circuits is of ever increasing importance. Electrical behavior in the event of a short circuit is discussed, taking an IGBT half-bridge configuration as an example. Finally the parasitic effects which are particularly likely to occur during fast switching of an IGBT are explained. |
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| Filename: | Unnamed file |
| Filesize: | 3.205 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-02-15 by System |
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