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A UNIFIED MODEL FOR THE POWER MOSFET INCLUDING THE INVERSE DIODE AND THE PARASITIC BIPOLAR TRANSISTOR
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| Author(s) |
C. H. Xu; D. Schröder |
| Abstract |
The power MOSFET with the inverse diode and the parasitic bipolar transistor is analyzed and characterized through modelling and simulation. The models for the MOSFET switch and the power diode developed by the authors and a conventional bipolar transistor model are combined with each other and unified to a complete model for the power MOSFET. It describes beside the charaderistics of each single model also the interaction between them. The model is implemented in the commercially available netwerk simulator IG-SPICE (an enhanced SPICE program) by writing a "state-dependent Fortran subprogram". Complicated dynamic behavior of the whole device in circuits for instance a bridge circuit can he simulated and analyzed, where the device is used as a switch as well as a free-wheeling diode and the parasitic bipolar transistor can be activated. The simulation shows a good agreement with the measurement. |
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| Filename: | Unnamed file |
| Filesize: | 2.868 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-02-15 by System |
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