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CHARGE CONTROL TRANSIENT MODELLING OF ASYMMETRICAL PIN POWER DIODES
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| Author(s) |
J. McGhee; I. A. Henderson |
| Abstract |
A charge control transient model for asymmetrical PIN semiconductor power diodes is derived. This model is embodied in a non-linear ordinary differential equation of first order. It is shown that effective charge control modelling requires a knowledge of the excess charge stored, the current at the ohmic contact with the external world and that at the space-charge to bulk boundary on the P side of the PI junction. They must be specified in terms of carrier densities at the respective boundaries and external drive current. Expressing both carrier currents at the PI junction using correction factors reveals how all asymmetries influence the open circuit voltage decay of these diodes. In this manner account is taken of end region recombination due to space charge recombination, finite geometry, and enhanced recombination due to ambipolar effects. The model is compared with a long emitter diffusion model and a low level charge control model. |
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| Filename: | Unnamed file |
| Filesize: | 2.91 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-02-15 by System |
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