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HIGH POWER GTO'S WITH FREE-FLOATING SILICON TECHNOLOGY
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| Author(s) |
A. Schweizer; A. A. Jaecklin; P. Streit |
| Abstract |
The free floating silicon technology (FFST) is very well adapted to modern large area semiconductor device fabrication and permits application of advanced cathode and anode emitter structures as well as improved lifetime control methods for turn-off devices with reduced switching energies. A camparison with gate turn-off thyristors (GTO's) in alloyed technique shows that already present-day devices using FFST exhibit an improved trade-off between static and dynamic power losses without affecting the performance in surge current, thermal cycling capability and thermal resistance. For the next generation of high power turn-off devices, requiring finer structures, the advantages of FFST over alloying technique are expected to be even more important. |
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| Filename: | Unnamed file |
| Filesize: | 614.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2021-02-12 by System |
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