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THE INFLUENCE OF GATE DRIVE CIRCUITS ON THE SWITCHING BEHAVIOUR OF LARGE GATE TURN-OFF THYRISTORS (GOTS)
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| Author(s) |
Reinhard Sievers; J. Schmidt |
| Abstract |
First a universal gate drive circuit for GTOs with turn-off currents up to 1000 A at a maximum switching frequency of 5 - 10 kHz is presented. The gate drive circuit disposes of an integrated, galvanically independant voltage supply. For reliability's sake opticaI fibres were used as signal transfer. On the gate drive circuit also supervision functions are integrated. Second investigation results with variable gate drive currents of GTOs are described. lt appears that the amplitude of the turn-on gate drive current considerably influences both the gate-controlled delay time and the turn-on time. So an increase of the gate current diminishes the turn-on losses, thus enabling a higher switching frequency. When turning-off GTOs the storage time as well as the fall time of the GTOs is increasing while the rate of negative gate current rise decreases. |
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| Filename: | Unnamed file |
| Filesize: | 1013 KB |
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| Type |
Members Only |
| Date |
Last modified 2021-02-12 by System |
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