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BIPOLAR TRANSISTORS IN HIGH FREQUENCY AREAS SWITCH-ON DRIVE TECHNIQUES FOR SERIES RESONANT CONVERTERS
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| Author(s) |
J. Arnould; D. Lafore; J. M. Li |
| Abstract |
High voltage power bipolar transistors (H.V.P.B.T.) behavior in high frequency areas depends not only on their own performances but also on the converter structures in which they are implemented. The series resonant converter structure with spontaneous turn-on, appears as a favorable way to increase frequency. This paper shows that it is necessary to have special base drive circuits due to a half sine collector current, having positive and negative dlk/dt during conduction. With frequency increasing, dlk/dt becomes important; consequently the base drive must have very high dynamic performances. It is demonstrated by simulation and experiment that the peak base current reaches the same value as maximum collector current for the frequencies above 200kHz and that to keep the transistor in the pseudo-saturation after turn-on and out of hard saturation at turn-off, the base drive must be bi-directional in current during on-state. |
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| Filename: | Unnamed file |
| Filesize: | 690.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2021-02-08 by System |
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