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TEST AND MEASUREMENT CIRCUIT FOR POWER DEVICES IN RESONANT APPLICATIONS
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| Author(s) |
K. Heumann; D. Tegtmeier |
| Abstract |
Resonant inverters become more important in power electronics. For the power semiconductor devices the switching and on-state stress is quite different from that in a PWM inverter. A novel test circuit for resonant concepts at high switching frequencies (> 200 kHz) is presented, which allows to determine the semiconductor losses. Typical current and voltage waveforms of power semiconductors (MOSFET and SIT) in resonant inverters are given. A simulation of the test circuit proves the performance to have similar current and voltage waveforms. Measurement results of the power semiconductor losses in a high frequency series resonant inverter are shown. |
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| Filename: | Unnamed file |
| Filesize: | 513.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2021-02-08 by System |
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