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Thermal Model Development for SiC MOSFETs Robustness Analysis under Repetitive Short Circuit Tests
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| Author(s) |
Mario PULVIRENTI |
| Abstract |
The aim of this paper is to analyze the SiC MOSFETs behavior under repetitive short circuit tests. In particular, the activity is focused on a deep evaluation of short circuit dynamic by dedicated laboratory measurements conducted at different conditions supported and compared by means of a robust physical model developed by Finite Element Approach (FEA) and Failure Analysis (FA). |
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| Filename: | 0408-epe2020-full-18110427.pdf |
| Filesize: | 1.668 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-01-18 by System |
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