| Abstract |
This paper presents a simplified calculation of parasitic elements (LC) and mutual couplings betweenparasitics of wide-bandgap (WBG) power semiconductor modules, based on analytical equations andon 3D FEM. A simplified parallel plate capacitor is derived from stray fields of different plate surfaces.The simple structures e. g. two parallel round wires with different directions of current, are consideredto calculate the parasitic inductance and the magnetic coupling. The analytical models are verified byANSYS Q3D results. This method includes stray fields of capacitive and inductive parasitic structuresbased on a simplified geometric approach. The package of a SiC-MOSFET half-bridge power moduleis 3D-modeled and the parasitic elements are extracted. The analytical models are verified by numerical results. At last, the influence of parasitic elements and mutual couplings on the switching characteristics is analyzed. |
