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Operation principle and perspective performances of Metal Oxide Vacuum Field Effect Transistor - MOVFET
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| Author(s) |
Annunziata SANSEVERINO |
| Abstract |
The operation principle of Metal Oxide Vacuum Field Effect Transistor is presented. It is based on the emission of electrons from a cold cathode and exhibits pentode-like characteristics with very low on resistance thanks to the conduction in a vacuum. Simulations are used to study the effects of the technological choices on the device perspective performances which appear to be very promising in power electronics applications. |
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| Filename: | 0589-epe2020-full-19203605.pdf |
| Filesize: | 552 KB |
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| Type |
Members Only |
| Date |
Last modified 2021-01-18 by System |
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