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Analysis of Switching Performance and EMI Emission of SiC Inverters under the Influence of Parasitic Elements and Mutual Couplings of the Power Modules
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| Author(s) |
Mohammad ALI |
| Abstract |
Parasitic elements and mutual couplings of SiC half-bridge modules strongly affect the switchingcharacteristics of devices. They excite overshoots and oscillations that further contribute to increasedEMI emissions. This paper will explain and analyze such effects on the switching performance andEMI emissions, based on 3D FEM models of the module. It can be said that knowledge about theeffects of parasitic elements and mutual couplings on the switching behavior is an important basis forthe design guidelines of fast switching wide-bandgap (WBG) power converters. A three-phase DC-ACinverter prototype with three SiC half-bridge MOSFET modules and an EMI measurement test setupare constructed for the experiments. The experiments results are validated with simulation results. |
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| Filename: | 0487-epe2020-full-09005158.pdf |
| Filesize: | 1.405 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-01-18 by System |
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