| Abstract |
SiC MOSFETs have a low short circuit withstand time. To address this challenge, a soft shut down and two original detection methods are proposed in this paper, easily implemented and based-on (ig, vgs) diagnosis with no direct time dependency. The first one is dedicated for SiC MOSFETs using his gate-leakage thermal runaway current, and the second one is more general and faster using the gate-charge monitoring. Both are experimentally validated and compared in terms of response-time and robustness capability. |
