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Advanced IGBT control strategies - Improvement of the switching characteristics via active gate control
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| Author(s) |
H.P. Rothwangl; H. Schamböck |
| Abstract |
This paper presents a new developed control circuit for the switching behaviour of IGBT modules.
The control circuit includes boosted active du/dt - control to reduce the voltage gradient and boosted
active clamp-control to limit the over voltage at turn-off. Unlike common methods, the circuit design
allows to set the breakdown voltage of the zenerdiodes below the maximum possible voltage of the
intermediate d.c. link of the electronic power converter. Tests with various Eupec modules (1700V,
3300V) have been carried out with satisfying results. |
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| Filename: | EPE2003-PP0284 - Rothwangl |
| Filesize: | 133 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-14 by Unknown |
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